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Partname:RF2117
Description:High efficiency 400MHz amplifier
Manufacturer:RF Micro Devices
Package:PSOP
Pins:16
Oper. temp.:-40 to 85
Datasheet:PDF (173K).
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The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM applications operating at 433MHz. The device is packaged in a low cost 16-lead plastic package with a metal backside. The device is self-contained with the exception of the output matching network and power supply feed line.

Click here to download RF2117 Datasheet
Click here to download RF2117 Datasheet
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