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Partname:RF2115LPCBA
Description: High power UNF amplifier
Manufacturer:RF Micro Devices
Package:QLCC
Pins:16
Oper. temp.:-40 to 85
Datasheet:PDF (101K).
Click here to download *)

The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is packaged in a 16-lead ceramic quad leadless chip carrier with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 10dB steps.

Click here to download RF2115LPCBA Datasheet
Click here to download RF2115LPCBA Datasheet
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