The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.