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Partname: | FPD3000-000SQ |
Description: | 2W POWER pHEMT |
Manufacturer: | RF Micro Devices |
Datasheet: | PDF (243K). Click here to download *) |
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mx3000 m Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 is also available in the low-cost plastic SOT89 package. |
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![Click here to download FPD3000-000SQ Datasheet](../../../pndecoder/datasheets/RFND/img/000320.gif) Click here to download FPD3000-000SQ Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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