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| Partname: | FPD3000-000 |
| Description: | 2W POWER pHEMT |
| Manufacturer: | RF Micro Devices |
| Datasheet: | PDF (243K).
Click here to download *) |
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mx3000 m Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 is also available in the low-cost plastic SOT89 package. |
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Click here to download FPD3000-000 Datasheet*) |
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