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Partname: | FPD2250 |
Description: | 1.5W POWER pHEMT |
Manufacturer: | RF Micro Devices |
Datasheet: | PDF (242K). Click here to download *) |
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mx2250 m Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 is also available in the low-cost plastic SOT89 package. |
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Click here to download FPD2250 Datasheet*) |
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