ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
More than
480 534 
registered clients
Partname:FPD2250-000S3
Description:1.5W POWER pHEMT
Manufacturer:RF Micro Devices
Datasheet:PDF (242K).
Click here to download *)

The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mx2250 m Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 is also available in the low-cost plastic SOT89 package.

Click here to download FPD2250-000S3 Datasheet
Click here to download FPD2250-000S3 Datasheet
*)
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.
Free Electronics Engineering Subscription
Win Win Circuit - PCB,PCBA,Touch Screen,LED Lighting
Win Win Circuit LTD. PCB, PCBA, LCD Module
www.wwteq.com
COPYRIGHT 1997-2024 ChipDocs  ALL RIGHT RESERVED