The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 mx1500 m Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1500 is also available in the low-cost plastic SOT89 and DFN packages.