The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose. Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the package standard "Driver MOS FET integrated SiP (DrMOS)" proposed by Intel Corporation.