The R1Q2A3636B is a 1,048,576-word by 36-bit, the R1Q2A3618B is a 2,097,152-word by 18-bit, and the R1Q2A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.