The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. This single channel amplifier provides typically, 21 dB small signal gain and 31 dBm output power at 1 dB gain compression. 21 dB Typical Small Signal Gain 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR 31 dBm Output Power at 1 dB Gain Compression 32 dBm Output Power at 3 dB Gain Compression 22% Typical Power Added Efficiency at 1 dB Gain Compression