The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. Two identical amplifier channels are provided to achieve a typical total combined (using an off-chip combiner) output power of 33 dBm at 3 dB gain compression. A single channel provides typically, 18 dB small signal gain and 31 dBm output power at 1 dB gain compression.