The RMPA2051-102 is a small outline, power amplifier module (PAM) for WCDMA and CDMA2000 applications. The Power Amplifier Module (PAM) is internally matched to 50 ohms and DC blocked to minimize the use of external components and reduce circuit complexity for system designers. High power-added efficiency and excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process. Single positive-supply operation 32% power-added efficiency at +28 dBm WCDMA average output power Compact LCC package: 6.0 x 6.0 x 1.5 mm3 50-ohm matched and DC blocked input/output Adjustable quiescent current and power-down mode