The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process.