The RMPA1751-102 is a small-outline, power amplifier module (PAM) for Korean-band CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process.