The RMPA0953-103 power amplifier module (PAM) for AMPS, CDMA and CDMA2000-1X Cellular applications. The PAM is internally matched to 50 ohms to minimize the use of external components. Advanced DC power management reduces current consumption during peak phone usage at backed-off RF power levels. Advanced Digital Bias control reduces the number of interface components to baseband. High power-added efficiency and excellent linearity are achieved using Raytheon's InGaP Heterojunction Bipolar Transistor (HBT) process.