The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-m gate MESFET devices fabricated on a semi-insulating GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per stage and to facilitate gain control (4x125m & 4x250m). The third stage is a 3-cell distributed dual-gate FET amplifier designed for high output power and efficiency (3x500m). The RMM2080 amplifier is designed for interconnection with microstrip transmission media using fully automatic assembly techniques.