|
|
|
|
| Partname: | RMBA09501A-58 |
| Description: | Cellular 2 Watt linear GaAs MMIC power amplifier |
| Manufacturer: | |
| Package: | SMD |
| Pins: | 12 |
| Oper. temp.: | -30 to 85 |
| Datasheet: | PDF (378K).
Click here to download *) |
The RMBA09501A-58 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon's pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The device is matched for 50 ohms input impedance. 2 Watt Linear output power at 37 dBc ACPR1 for CDMA operation OIP3 43 dBc at 27 and 30 dBm power output Small Signal Gain of > 30 dB |
|
Click here to download RMBA09501A-58 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
