P281 Datasheet - 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor from

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Partname:	P281
Description:	2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:
Package:	SO-8
Pins:	8
Oper. temp.:	-65 to 150
Datasheet:	PDF (38.4). Click here to download ^*)

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