LQ801 Datasheet - 30 Watt, silicon gate enhancement mode RF power LDMOS transistor from

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Partname:	LQ801
Description:	30 Watt, silicon gate enhancement mode RF power LDMOS transistor
Manufacturer:
Package:	--
Pins:	4
Oper. temp.:	-65 to 150
Datasheet:	PDF (35.3). Click here to download ^*)

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