Partname: F2201 Description: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor Manufacturer: Package: -- Pins: 2 Oper. temp.: -65 to 150 Datasheet: PDF (35.7). Click here to download *)	Click here to download F2201 Datasheet*)
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Electronic components and semiconductor parts similar to F2201: BF2201, MMBF2201, MMBF2201NT1, MMBF2201NT3, MMBF2201PT1, MMBF2201PT3, PF2201, RF2201