F2001 Datasheet - 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor from

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Partname:	F2001
Description:	2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:
Package:	--
Pins:	2
Oper. temp.:	-65 to 150
Datasheet:	PDF (37.8). Click here to download ^*)

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