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Partname:C30737E-500
Description:Epitaxial Silicon Avalanche Photodiode
Manufacturer:
Datasheet:PDF (101K).
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The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameters of the photosensitive surface are 0.23 mm and 0.5mm. Other photosensitive diameters are also available on a custom basis.

Click here to download C30737E-500 Datasheet
Click here to download C30737E-500 Datasheet
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