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Partname: | NTGD1100LT1G |
Description: | Power MOSFET 8 V, ±3.3 A, Load Switch with Level-Shift P-Channel, TSOP-6 |
Manufacturer: | ON Semiconductor |
Datasheet: | PDF (70.1K). Click here to download *) |
The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF |
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Click here to download NTGD1100LT1G Datasheet*) |
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