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| Partname: | MJE18004D2 |
| Description: | High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
| Manufacturer: | ON Semiconductor |
| Package: | TO-220 |
| Pins: | 3 |
| Datasheet: | PDF (466K).
Click here to download *) |
The MJE18004D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. |
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Click here to download MJE18004D2 Datasheet*) |
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