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Partname: | MJE18002D2 |
Description: | High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
Manufacturer: | ON Semiconductor |
Package: | TO-220 |
Pins: | 3 |
Datasheet: | PDF (152K). Click here to download *) |
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit. The main advantages brought by these new transistors are: |
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Click here to download MJE18002D2 Datasheet*) |
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