|
|
|
|
| Partname: | MJE18002D2 |
| Description: | High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
| Manufacturer: | ON Semiconductor |
| Package: | TO-220 |
| Pins: | 3 |
| Datasheet: | PDF (152K).
Click here to download *) |
The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit. The main advantages brought by these new transistors are: |
|
Click here to download MJE18002D2 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
