The NTE912 consists of five generalpurpose silicon NPN transistors on a common monolithic substrate in a 14Lead DIP type package. Two of the transistors are internally connected to form a differentiallyconnected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: