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| Partname: | NTE6508 |
| Description: | Integrated circuit. CMOS, 1K static RAM (SRAM). |
| Manufacturer: | |
| Package: | DIP |
| Pins: | 16 |
| Oper. temp.: | -40 to 85 |
| Datasheet: | PDF (37.5).
Click here to download *) |
The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16Lead DIP type package fabricated using selfaligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowing effecient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. Features: |
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Click here to download NTE6508 Datasheet*) |
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