The NTE2708 is an ultraviolet lighterasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8bit length. This device is fabricated using Nchannel silicon gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pullup resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are threestate for OR tying multiple devices on a common bus. This EPROM is designed for highdensity fixed memory applications where fast turn arounds and/or program changes are required. This device is designed for operation from 0 to +70C and is supplied in a 24Lead DIP package for insertion in mountinghole rows on 600mil (15.2 mm) centers. Features: