The NTE21256 is a 262,144 word by 1bit dynamic Random Access Memory. This 5Vonly component is fabricated with Nchannel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard 16Lead DIP package. Features of this device include single power supply with 10% tolerance, on chip address, date registers which eliminate the need for interface registers, and fully TTL compatible inputs and outputs, including clocks. In addition to the usual read, write, and readmodifywrite cycles, the NTE21256 is capable of early and late write cycles, RASonly refresh, and hidden refresh. Common I/O capability is given by using early write operation.