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Partname: | NTE2114 |
Description: | Integrated circuit. MOS, static 4K RAM, 300ns. |
Manufacturer: | |
Package: | DIP |
Pins: | 18 |
Oper. temp.: | 0 to 70 |
Datasheet: | PDF (29.0K). Click here to download *) |
The NTE2114 1024word 4bit static random access memory is fabricated using Nchannel silicon gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for operation. The data is read out nondestructively and has the same polarity as the input data. Common input/output pins are provided. The separate chip select input (CS) allows easy memory expansion by ORtying individual devices to a data bus. |
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Click here to download NTE2114 Datasheet*) |
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