The NTE2101 is a highspeed 1024 x 1 bit static random access read/write memory in a 16Lead DIP type package designed using NChannel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate NChannel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output allows easy memory expansion by ORtying individual devices to a data bus. Data in and data out have the same polarity.