The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs This was accomplished by advanced linear processing and a unique new device structure Electrical characteristics of these devices such as drift versus initial offset voltage noise and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor Extrinsic emitter and base resistances are much lower than presently available pairs either monolithic or discrete giving extremely low noise and theoretical operation over a wide current range Most parameters are guaranteed over a current range of 1 mA to 1 mA and 0V up to 40V collector-base voltage ensuring superior performance in nearly all applications To guarantee long term stability of matching parameters internal clamp diodes have been added across the emitterbase junction of each transistor These prevent degradation due to reverse biased emitter current the most common cause of field failures in matched devices The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices The LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely