The PD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The PD4443362 is suitable for applications which require synchronous operation, high-speed, low voltage, highdensity memory and wide bit configuration, such as cache and buffer memory. The PD4443362 is packaged in 100-pin plastic LQFP with a 1.4 mm package thickness for high density and low capacitive loading.