The PC8119T and PC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer components. The PC8119T and PC8120T are manufactured using NEC's 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion / migration. Thus, this IC has excellent performance, uniformity and reliability.