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Partname:UPA1857GR-9JG
Description:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Manufacturer:NEC Electronics Inc.
Datasheet:PDF (73.9K).
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The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Click here to download UPA1857GR-9JG Datasheet
Click here to download UPA1857GR-9JG Datasheet
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