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Partname: | UPA1763G-E2 |
Description: | N-channel enhancement type power MOS FET(Dual type) |
Manufacturer: | NEC Electronics Inc. |
Package: | 8-P-SOP |
Datasheet: | PDF (69.9K). Click here to download *) |
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. |
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Click here to download UPA1763G-E2 Datasheet*) |
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