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| Partname: | UPA1726G-E1 |
| Description: | N-channel enhancement type power MOS FET |
| Manufacturer: | NEC Electronics Inc. |
| Package: | 8-P-SOP |
| Datasheet: | PDF (58.9K).
Click here to download *) |
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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Click here to download UPA1726G-E1 Datasheet*) |
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