The NE9000, NE9001, and NE9002 are 0.5 micron recessed gate medium power GaAs FETs for commercial and space amplifier and oscillator applications to 20 GHz. Chip configurations available are: the NE900000, a one cell die of 400 m gate width; the NE900100, a one cell die of 750 m gate width; and the NE900200, a two cell die of 1500 m total gate width. The series is available in chip form or a variety of hermetic ceramic packages. The NE900000, NE900100, and NE900200 are standard die without wrap-around sourcemetallization, while the NE900000G, NE900100G, and NE900200G have wrap-around source metallization. The series is space qualified.