|
|
|
|
| Partname: | NE8500200-WB |
| Description: | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| Manufacturer: | NEC Electronics Inc. |
| Datasheet: | PDF (48.9K).
Click here to download *) |
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in `95' package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) |
|
Click here to download NE8500200-WB Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
