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Partname: | NE722S01-T1 |
Description: | L to X band N-channel GaAs MESFET. |
Manufacturer: | NEC Electronics Inc. |
Package: | Low cost plactic |
Pins: | 4 |
Oper. temp.: | 0 to 125 |
Datasheet: | PDF (47.3). Click here to download *) |
The NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. |
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Click here to download NE722S01-T1 Datasheet*) |
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