|
|
|
|
| Partname: | NE721S01 |
| Description: | General purpose L to X-band GaAs MESFET. Idss 20 to 120 mA. |
| Manufacturer: | NEC Electronics Inc. |
| Package: | Low cost plactic |
| Pins: | 4 |
| Oper. temp.: | 0 to 125 |
| Datasheet: | PDF (32.9).
Click here to download *) |
The NE721S01 is a low cost 0.8 m recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/ low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications. |
|
Click here to download NE721S01 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
