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| Partname: | NE699M01-T1 |
| Description: | NPN epitaxial silicon transistor for microwave high-gain amplification. |
| Manufacturer: | NEC Electronics Inc. |
| Package: | Small mini mold |
| Pins: | 6 |
| Oper. temp.: | 0 to 150 |
| Datasheet: | PDF (50.3).
Click here to download *) |
The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. |
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Click here to download NE699M01-T1 Datasheet*) |
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