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| Partname: | NE552R679A |
| Description: | 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
| Manufacturer: | NEC Electronics Inc. |
| Datasheet: | PDF (75.5K).
Click here to download *) |
The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2 technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage. |
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Click here to download NE552R679A Datasheet*) |
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