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| Partname: | NE5510179A-T1 |
| Description: | 3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
| Manufacturer: | NEC Electronics Inc. |
| Package: | Surface mount |
| Pins: | 4 |
| Oper. temp.: | -30 to 85 |
| Datasheet: | PDF (39.2).
Click here to download *) |
The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.5 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function. |
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Click here to download NE5510179A-T1 Datasheet*) |
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