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Partname: | NE5500179A |
Description: | SILICON POWER MOS FET |
Manufacturer: | NEC Electronics Inc. |
Datasheet: | PDF (66.7K). Click here to download *) |
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% pozwer added efficiency at 3.5 V, respectively. |
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Click here to download NE5500179A Datasheet*) |
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