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Partname:NE434S01
Description:C band super low noise HJ FET.
Manufacturer:NEC Electronics Inc.
Package:Low cost plactic
Pins:4
Oper. temp.:0 to 125
Datasheet:PDF (37.7).
Click here to download *)

The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems.

Click here to download NE434S01 Datasheet
Click here to download NE434S01 Datasheet
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