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Partname:NE4210S01-T1B
Description:GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
Manufacturer:NEC Electronics Inc.
Package:4-pin u-x type mold PKG
Datasheet:PDF (65.2K).
Click here to download *)

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

Click here to download NE4210S01-T1B Datasheet
Click here to download NE4210S01-T1B Datasheet
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