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Partname:NE34018-T1-63
Description:GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA.
Manufacturer:NEC Electronics Inc.
Package:SOT-343
Pins:4
Oper. temp.:0 to 125
Datasheet:PDF (84.4).
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The NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1-3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications.

Click here to download NE34018-T1-63 Datasheet
Click here to download NE34018-T1-63 Datasheet
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